Theoretical analysis of semiconductor surface passivation by adsorption of alkaline-earth metals and chalcogens

Demet Usanmaz, G. P. Srivastava, A. Z. AlZahrani

Research output: Contribution to journalArticlepeer-review

Abstract

We begin with the concept of semiconductor surface passivation by adsorption of sub-monolayer atomic coverages. We then present a theoretical analysis of structural reconstruction and passivating behaviour of semiconductor surfaces upon sub-monolayer adsorption of alkaline-earth metals (group II atoms) and chalcogens (group VI atoms). Specific results are presented from first-principles calculations for Ca adsorption on Si(0 0 1) and Si(1 1 1), and S adsorption on GaAs(0 0 1). The role of chemical species of adsorbate and surface atoms in achieving different degrees of passivation is highlighted.
Original languageAmerican English
JournalApplied Surface Science
Volume258
DOIs
StatePublished - Aug 15 2012

Keywords

  • Semiconductor surface passivation
  • Atomic adsorption
  • Pseudopotential theory
  • Density functional theory

Disciplines

  • Physical Sciences and Mathematics
  • Physics

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