Abstract
Three memristive devices were fabricated and investigated for sensing oxygen in ambient air. The device design was as follows: Deposition of copper (Cu) bottom electrodes, copper oxide (CuxO) switching layers, and W top electrodes in a crossbar array structure. The CuxO layer was deposited via reactive sputtering of a Cu target with Ar/O2 mixture. A portion of this layer was left exposed for sensing. Atomic composition was confirmed via energy-dispersive X-ray spectroscopy (EDS), and current-voltage characteristics were measured using a picoammeter. Results demonstrate an increase in resistance states (24-31% for low resistance states) upon prolonged exposure to ambient air.
| Original language | American English |
|---|---|
| Title of host publication | 10th IEEE International Conference on Nano/Micro Engineered and Molecular Systems |
| Publisher | Institute of Electrical and Electronics Engineers [IEEE] |
| Pages | 254-258 |
| ISBN (Electronic) | 978-1-4673-6695-3 |
| State | Published - Apr 7 2015 |
Keywords
- sensors
- memristors
- oxygen
- passive sensing
- electrodes
- resistance
- copper
- tungsten
- switches
Disciplines
- Electrical and Computer Engineering