Radiation-hardened microelectronics for accelerators

Jim Gover

doi:10.1109/23.12697

Radiation-hardened microelectronics for accelerators

Jim Gover

Kettering University

Research output: Contribution to journal › Article › peer-review

Abstract

Ionization and displacement phenomena in semiconducting materials are reviewed. How these basic effects lead to changes in the electrical characteristics of transistors and diodes and the functionality of integrated circuits are discussed. The fundamental radiation limits for various semiconductor technologies are summarized. Recommendations and precautions are given regarding the applicability of various microelectronic technologies to different accelerator environments.

Original language	American English
Journal	IEEE Transactions on Nuclear Science
Volume	35
DOIs	https://doi.org/10.1109/23.12697
State	Published - Feb 1988

Disciplines

Engineering

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10.1109/23.12697License: Unspecified

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@article{b5cffd0ac53744488ae24e41c07f429a,

title = "Radiation-hardened microelectronics for accelerators",

abstract = " Ionization and displacement phenomena in semiconducting materials are reviewed. How these basic effects lead to changes in the electrical characteristics of transistors and diodes and the functionality of integrated circuits are discussed. The fundamental radiation limits for various semiconductor technologies are summarized. Recommendations and precautions are given regarding the applicability of various microelectronic technologies to different accelerator environments. ",

author = "Jim Gover",

note = "Ionization and displacement phenomena in semiconducting materials are reviewed. How these basic effects lead to changes in the electrical characteristics of transistors and diodes and the functionality of integrated circuits are discussed. The fundamental radiation limits for various semiconductor technologies are summarized.",

year = "1988",

month = feb,

doi = "10.1109/23.12697",

language = "American English",

volume = "35",

journal = "IEEE Transactions on Nuclear Science",

}

TY - JOUR

T1 - Radiation-hardened microelectronics for accelerators

AU - Gover, Jim

N1 - Ionization and displacement phenomena in semiconducting materials are reviewed. How these basic effects lead to changes in the electrical characteristics of transistors and diodes and the functionality of integrated circuits are discussed. The fundamental radiation limits for various semiconductor technologies are summarized.

PY - 1988/2

Y1 - 1988/2

N2 - Ionization and displacement phenomena in semiconducting materials are reviewed. How these basic effects lead to changes in the electrical characteristics of transistors and diodes and the functionality of integrated circuits are discussed. The fundamental radiation limits for various semiconductor technologies are summarized. Recommendations and precautions are given regarding the applicability of various microelectronic technologies to different accelerator environments.

AB - Ionization and displacement phenomena in semiconducting materials are reviewed. How these basic effects lead to changes in the electrical characteristics of transistors and diodes and the functionality of integrated circuits are discussed. The fundamental radiation limits for various semiconductor technologies are summarized. Recommendations and precautions are given regarding the applicability of various microelectronic technologies to different accelerator environments.

UR - https://ieeexplore.ieee.org/document/12697

U2 - 10.1109/23.12697

DO - 10.1109/23.12697

M3 - Article

VL - 35

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

ER -

Radiation-hardened microelectronics for accelerators

Abstract

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