Fabrication of a W/CuxO/Cu memristor with sub-micron holes for passive sensing of oxygen

Chinwe Tait; Lixin Dong

Fabrication of a W/CuxO/Cu memristor with sub-micron holes for passive sensing of oxygen

Kettering University

Research output: Contribution to journal › Article › peer-review

Original language	American English
Journal	Microelectronic Engineering
State	Published - Oct 1 2016

Disciplines

Electrical and Electronics
Electronic Devices and Semiconductor Manufacturing
Nanotechnology Fabrication

Cite this

@article{721ffe34c0184110a2dc1dd7c33db96f,

title = "Fabrication of a W/CuxO/Cu memristor with sub-micron holes for passive sensing of oxygen",

author = "Chinwe Tait and Lixin Dong",

note = "A memristor array with sub-micron holes was fabricated to allow exposure of the switching layer. * The feasibility of using this perforated memristor structure for oxygen sensing is demonstrated. * The mechanism by which this sensing occurred is believed to be the filling of vacancy sites within the switching layer by adsorbed oxygen.",

year = "2016",

month = oct,

day = "1",

language = "American English",

journal = "Microelectronic Engineering",

}

TY - JOUR

T1 - Fabrication of a W/CuxO/Cu memristor with sub-micron holes for passive sensing of oxygen

AU - Tait, Chinwe

AU - Dong, Lixin

N1 - A memristor array with sub-micron holes was fabricated to allow exposure of the switching layer. * The feasibility of using this perforated memristor structure for oxygen sensing is demonstrated. * The mechanism by which this sensing occurred is believed to be the filling of vacancy sites within the switching layer by adsorbed oxygen.

PY - 2016/10/1

Y1 - 2016/10/1

UR - https://www.sciencedirect.com/science/article/abs/pii/S0167931716303562

M3 - Article

JO - Microelectronic Engineering

JF - Microelectronic Engineering

ER -

Fabrication of a W/CuxO/Cu memristor with sub-micron holes for passive sensing of oxygen

Disciplines

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