Effect of NO2 and NH3 on the resistive switching behavior of W/CuxO/Cu devices

Chinwe Tait; Lixin Dong

Effect of NO2 and NH3 on the resistive switching behavior of W/CuxO/Cu devices

Chinwe Tait
, Lixin Dong

Kettering University

Research output: Contribution to journal › Article › peer-review

Original language	American English
Journal	Journal of Micromechanics and Microengineering
State	Published - Sep 20 2017

Disciplines

Electrical and Computer Engineering
Electronic Devices and Semiconductor Manufacturing
Nanotechnology Fabrication

Cite this

TY - JOUR

T1 - Effect of NO2 and NH3 on the resistive switching behavior of W/CuxO/Cu devices

AU - Tait, Chinwe

AU - Dong, Lixin

PY - 2017/9/20

Y1 - 2017/9/20

UR - https://iopscience.iop.org/article/10.1088/1361-6439/aa8672/meta?casa_token=cs1IkK2uwCwAAAAA:hPlYZyxSGYDu9ziJWBm8sm06HIrt9n46iNZpQr6kgSZ9GBTq5UqvCjFzRSgTlwYR3vwIiSKAfKRt

M3 - Article

JO - Journal of Micromechanics and Microengineering

JF - Journal of Micromechanics and Microengineering

ER -

Effect of NO2 and NH3 on the resistive switching behavior of W/CuxO/Cu devices

Disciplines

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Cite this