Diamond Growth with Remote Methane Injection in a DC Arcjet CVD Reactor

Scott Reeve, Wayne A Weimer, David S Dandy

Research output: Contribution to journalArticlepeer-review

Abstract

A significant enhancement in the quality of diamond films grown using a remote CH4 carbon
source was observed in a direct current arcjet chemical vapor deposition reactor. The linewidths
cd the diamond peak at 1332 cm ’ in the Raman spectra from these films were reduced from
9.0 to 6.5 cm- ’ with no reduction in mass deposition rate as compared to films grown using
premixed reactor gas feeds. For diamond growth conditions, the percentage of the reactor feed
carbon reaching the substrate was measured to be .- 35%. The enhanced quality of the films is
attributed to reduced residence times of the carbon source in the plasma, which would limit the
gas phase chemistry from proceeding beyond CH; formation before the gas reaches the
substrate.
Original languageAmerican English
JournalApplied Physics Letters
StatePublished - Nov 1 1993

Disciplines

  • Engineering
  • Materials Science and Engineering
  • Physical Sciences and Mathematics

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