Comparison of SiC MOSFETs and GaN HEMTs Based High-efficiency High-power-density 7.2kW EV Battery Chargers

Guanliang Liu; Kevin Hua Bai; Matt McAmmond; Allan Brown; Philip Mike Johnson; Allan Taylor; Junchemg Lu

Comparison of SiC MOSFETs and GaN HEMTs Based High-efficiency High-power-density 7.2kW EV Battery Chargers

Guanliang Liu, Kevin Hua Bai, Matt McAmmond, Allan Brown, Philip Mike Johnson, Allan Taylor, Junchemg Lu

Kettering University

Research output: Contribution to conference › Presentation

Abstract

As two exemplary candidates of wide-bandgap devices, SiC MOSFETs and GaN HEMTs are regarded as successors of Si devices in medium-to-high-voltage (>1200V) and low-voltage (<;650V) domains, respectively, thanks to their excellent switching performance and thermal capability. With 650V SiC MOSFETs coming into being the direct competition of SiC and GaN in <;650V domains is inevitable, such as Level-2 battery chargers for electric vehicles. This paper applies 650V SiC and GaN to two 240VAC/7.2kW EV battery chargers, respectively, aiming to provide a head-to-head comparison of these two devices in terms of the efficiency, power density, thermal and cost, with the same control strategy of varying the phase-shift and switching frequency to cover the wide input range (80VAC~260VAC) and wide output range (200V~450VDC).

Original language	American English
State	Published - Dec 11 2017
Event	IEEE Xplore - Duration: Aug 30 2018 → …

Conference

Conference	IEEE Xplore
Period	8/30/18 → …

Keywords

Gallium nitride
Silicon carbide
Voltage control
HEMTs
MODFETs
Switches
Switching frequency

Disciplines

Electrical and Computer Engineering

Access to Document

https://ieeexplore.ieee.org/document/8170579

Cite this

@conference{0dbcb79325a54cb4b02f93cbe0ab09b6,

title = "Comparison of SiC MOSFETs and GaN HEMTs Based High-efficiency High-power-density 7.2kW EV Battery Chargers",

abstract = " As two exemplary candidates of wide-bandgap devices, SiC MOSFETs and GaN HEMTs are regarded as successors of Si devices in medium-to-high-voltage (>1200V) and low-voltage (<;650V) domains, respectively, thanks to their excellent switching performance and thermal capability. With 650V SiC MOSFETs coming into being the direct competition of SiC and GaN in <;650V domains is inevitable, such as Level-2 battery chargers for electric vehicles. This paper applies 650V SiC and GaN to two 240VAC/7.2kW EV battery chargers, respectively, aiming to provide a head-to-head comparison of these two devices in terms of the efficiency, power density, thermal and cost, with the same control strategy of varying the phase-shift and switching frequency to cover the wide input range (80VAC~260VAC) and wide output range (200V~450VDC).",

keywords = "Gallium nitride, Silicon carbide, Voltage control, HEMTs, MODFETs, Switches, Switching frequency",

author = "Guanliang Liu and Bai, {Kevin Hua} and Matt McAmmond and Allan Brown and Johnson, {Philip Mike} and Allan Taylor and Junchemg Lu",

year = "2017",

month = dec,

day = "11",

language = "American English",

note = "IEEE Xplore ; Conference date: 30-08-2018",

}

TY - CONF

T1 - Comparison of SiC MOSFETs and GaN HEMTs Based High-efficiency High-power-density 7.2kW EV Battery Chargers

AU - Liu, Guanliang

AU - Bai, Kevin Hua

AU - McAmmond, Matt

AU - Brown, Allan

AU - Johnson, Philip Mike

AU - Taylor, Allan

AU - Lu, Junchemg

PY - 2017/12/11

Y1 - 2017/12/11

N2 - As two exemplary candidates of wide-bandgap devices, SiC MOSFETs and GaN HEMTs are regarded as successors of Si devices in medium-to-high-voltage (>1200V) and low-voltage (<;650V) domains, respectively, thanks to their excellent switching performance and thermal capability. With 650V SiC MOSFETs coming into being the direct competition of SiC and GaN in <;650V domains is inevitable, such as Level-2 battery chargers for electric vehicles. This paper applies 650V SiC and GaN to two 240VAC/7.2kW EV battery chargers, respectively, aiming to provide a head-to-head comparison of these two devices in terms of the efficiency, power density, thermal and cost, with the same control strategy of varying the phase-shift and switching frequency to cover the wide input range (80VAC~260VAC) and wide output range (200V~450VDC).

AB - As two exemplary candidates of wide-bandgap devices, SiC MOSFETs and GaN HEMTs are regarded as successors of Si devices in medium-to-high-voltage (>1200V) and low-voltage (<;650V) domains, respectively, thanks to their excellent switching performance and thermal capability. With 650V SiC MOSFETs coming into being the direct competition of SiC and GaN in <;650V domains is inevitable, such as Level-2 battery chargers for electric vehicles. This paper applies 650V SiC and GaN to two 240VAC/7.2kW EV battery chargers, respectively, aiming to provide a head-to-head comparison of these two devices in terms of the efficiency, power density, thermal and cost, with the same control strategy of varying the phase-shift and switching frequency to cover the wide input range (80VAC~260VAC) and wide output range (200V~450VDC).

KW - Gallium nitride

KW - Silicon carbide

KW - Voltage control

KW - HEMTs

KW - MODFETs

KW - Switches

KW - Switching frequency

UR - https://digitalcommons.kettering.edu/electricalcomp_eng_conference/2

UR - https://ieeexplore.ieee.org/document/8170579

M3 - Presentation

T2 - IEEE Xplore

Y2 - 30 August 2018

ER -

Comparison of SiC MOSFETs and GaN HEMTs Based High-efficiency High-power-density 7.2kW EV Battery Chargers

Abstract

Conference

Keywords

Disciplines

Access to Document

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Cite this