Abstract
In this paper, an enhancement-mode GaN highelectron mobility transistor (HEMT)-based 7.2-kW single-phase charger was built. Connecting three such single-phase modules to the three-phase grid, respectively, generates a three-phase ~22-kW charger with the> 97% efficiency and > 3.3 - kW/L power density, superior to present Si-device-based chargers. In addition to GaN HEMTs with fast-switching transitions yielding high efficiency, the proposed charger employs the dc/dc stage to control the power factor and power delivery simultaneously, yielding little dc-bus capacitance and thereby high power density. To secure the soft switching for all switches within full voltage and power ranges, a variable switching frequency control with dual phase shifts was adopted at high power, and a triple phase shift was employed to improve the power factor at low power. Both control strategies accommodated the wide input range (80-260 VAC) and output range (200-450 VDC). A closed-loop control for the three-phase charger was realized to minimize the output current ripple and balance the power among three single-phase modules. Experimental results validated this design.
| Original language | American English |
|---|---|
| Journal | IEEE Transactions on Power Electronics |
| Volume | 33 |
| DOIs | |
| State | Published - Nov 2 2017 |
Keywords
- Battery charger
- Dual- active bridge (DAB)
- Electric vehicle (EV)
- Wide-bandgap (WBG) semiconductor
- Zero-voltage switching (ZVS)
Disciplines
- Electrical and Computer Engineering
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